All MOSFET. R5205CND Datasheet

 

R5205CND Datasheet and Replacement


   Type Designator: R5205CND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.8 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: CPT3
 

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R5205CND Datasheet (PDF)

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R5205CND

10V Drive Nch MOSFET R5205CND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.55.12.30.5Features1) Low resistance.2) High speed switching.0.750.650.92.3(1)Gate2.3(1) (2) (3)0.5(2)Drain1.0(3)Source Abbreviated symbol : R5205C ApplicationSwitching Packaging specifications Inner circuitPackage Taping2Type

Datasheet: R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX , R5021ANX , 2SK3878 , R5207AND , R6004CND , R6006AND , R6006ANX , R6008ANX , R6008FNJ , R6008FNX , R6010ANX .

History: NCEP85T14 | JCS10N70C

Keywords - R5205CND MOSFET datasheet

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