R5205CND Specs and Replacement

Type Designator: R5205CND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 525 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: CPT3

R5205CND substitution

- MOSFET ⓘ Cross-Reference Search

 

R5205CND datasheet

 ..1. Size:198K  rohm
 r5205cnd.pdf pdf_icon

R5205CND

10V Drive Nch MOSFET R5205CND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.5 Features 1) Low resistance. 2) High speed switching. 0.75 0.65 0.9 2.3 (1)Gate 2.3 (1) (2) (3) 0.5 (2)Drain 1.0 (3)Source Abbreviated symbol R5205C Application Switching Packaging specifications Inner circuit Package Taping 2 Type... See More ⇒

Detailed specifications: R5013ANJ, R5013ANX, R5016ANJ, R5016ANX, R5016FNX, R5019ANJ, R5019ANX, R5021ANX, 8205A, R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ, R6008FNX, R6010ANX

Keywords - R5205CND MOSFET specs

 R5205CND cross reference

 R5205CND equivalent finder

 R5205CND pdf lookup

 R5205CND substitution

 R5205CND replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.