R5207AND Specs and Replacement

Type Designator: R5207AND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 525 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: CPT3 SC63 SOT428

R5207AND substitution

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R5207AND datasheet

 ..1. Size:1156K  rohm
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R5207AND

Data Sheet 10V Drive Nch MOSFET R5207AND Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide SOA. (1) Gate 0.65 0.9 2.3 (2) Drain (1) (2) (3) 2.3 0.5 4) Drive circuits can be simple. (3) Source 1.0 5) Parallel use is easy. Application Swit... See More ⇒

Detailed specifications: R5013ANX, R5016ANJ, R5016ANX, R5016FNX, R5019ANJ, R5019ANX, R5021ANX, R5205CND, 7N65, R6004CND, R6006AND, R6006ANX, R6008ANX, R6008FNJ, R6008FNX, R6010ANX, R6012ANJ

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