All MOSFET. R5207AND Datasheet

 

R5207AND Datasheet and Replacement


   Type Designator: R5207AND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: CPT3 SC63 SOT428
 

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R5207AND Datasheet (PDF)

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R5207AND

Data Sheet10V Drive Nch MOSFET R5207AND Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide SOA.(1) Gate0.650.9 2.3(2) Drain(1) (2) (3)2.3 0.54) Drive circuits can be simple.(3) Source1.05) Parallel use is easy. ApplicationSwit

Datasheet: R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX , R5021ANX , R5205CND , STP75NF75 , R6004CND , R6006AND , R6006ANX , R6008ANX , R6008FNJ , R6008FNX , R6010ANX , R6012ANJ .

History: SRC65R220M2 | BLM7002 | R6020ENJ | SC8205S | NCE01P13K | SI2301ADS-T1 | JFAM20N50E

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