R6008FNJ Specs and Replacement
Type Designator: R6008FNJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: LPTS
R6008FNJ substitution
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R6008FNJ datasheet
r6008fnj.pdf
Data Sheet 10V Drive Nch MOSFET R6008FNJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Fast reverse recovery time (trr) 1.24 2) Low on-resistance. 2.54 0.4 0.78 3) Fast switching speed. 2.7 5.08 (1) (2) (3) 4) Gate-source voltage VGSS garanteed to be 30V . 5) Drive circuits can be simple. 6) Parallel use is easy. ... See More ⇒
r6008fnx.pdf
10V Drive Nch MOSFET R6008FNX Structure Dimensions (Unit mm) Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time. 1.2 2) Low on-resistance. 1.3 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 (1) Gate 5) Drive circuits can be simple. 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) 6) Parallel use is ea... See More ⇒
r6008anx.pdf
R6008ANX Nch 600V 8A Power MOSFET Datasheet Outline VDSS 600V TO-220FM RDS(on) (Max.) 0.8 ID 8A PD 50W (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead pla... See More ⇒
Detailed specifications: R5019ANX, R5021ANX, R5205CND, R5207AND, R6004CND, R6006AND, R6006ANX, R6008ANX, 2SK3878, R6008FNX, R6010ANX, R6012ANJ, R6012ANX, R6012FNX, R6015ANJ, R6015ANX, R6015ANZ
Keywords - R6008FNJ MOSFET specs
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History: R6006AND | STY139N65M5
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