R6008FNJ - параметры транзистора MOSFET, его аналоги, datasheet

R6008FNJ Datasheet (PDF)

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Data Sheet10V Drive Nch MOSFET R6008FNJ Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1) Fast reverse recovery time (trr)1.242) Low on-resistance.2.54 0.40.783) Fast switching speed.2.75.08(1) (2) (3)4) Gate-source voltage VGSS garanteed to be 30V .5) Drive circuits can be simple.6) Parallel use is easy.

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10V Drive Nch MOSFET R6008FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8 Features 1) Fast reverse recovery time. 1.22) Low on-resistance. 1.33) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1) Gate5) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2) Drain (1) (2) (3)6) Parallel use is ea

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R6008ANXNch 600V 8A Power MOSFET DatasheetOutlineVDSS600V TO-220FMRDS(on) (Max.)0.8ID8APD50W (1)(2)(3) Features Inner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 Body Diode 5) Parallel use is easy.6) Pb-free lead pla

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