RAF040P01 Specs and Replacement

Type Designator: RAF040P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TUMT3

RAF040P01 substitution

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RAF040P01 datasheet

 ..1. Size:1187K  rohm
 raf040p01.pdf pdf_icon

RAF040P01

Data Sheet 1.5V Drive Pch MOSFET RAF040P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount package(TUMT3). Abbreviated symbol SF Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering unit (piece... See More ⇒

Detailed specifications: R6020ANX, R6020ANZ, R6020FNX, R6025ANZ, R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, CS150N03A8, RAL025P01, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.