All MOSFET. RAF040P01 Datasheet

 

RAF040P01 Datasheet and Replacement


   Type Designator: RAF040P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TUMT3
 

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RAF040P01 Datasheet (PDF)

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RAF040P01

Data Sheet1.5V Drive Pch MOSFET RAF040P01 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTUMT3Features1) Low on-resistance.2) Low voltage drive(1.5V drive).3) Small surface mount package(TUMT3).Abbreviated symbol : SF ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering unit (piece

Datasheet: R6020ANX , R6020ANZ , R6020FNX , R6025ANZ , R6046ANZ , R6046FNZ , R8002ANX , R8008ANX , IRLB4132 , RAL025P01 , RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 .

History: WMQ25P03T1 | WSD2018BDN22 | ME9435-G

Keywords - RAF040P01 MOSFET datasheet

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