RAL025P01 Specs and Replacement

Type Designator: RAL025P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TUMT6

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RAL025P01 datasheet

 ..1. Size:1158K  rohm
 ral025p01.pdf pdf_icon

RAL025P01

Data Sheet 1.5V Drive Pch MOSFET RAL025P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol SD Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TCR Basic ordering unit (pieces) 3000 ... See More ⇒

Detailed specifications: R6020ANZ, R6020FNX, R6025ANZ, R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, NCEP15T14, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25

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