RAL045P01 Specs and Replacement

Type Designator: RAL045P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TUMT6

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RAL045P01 datasheet

 ..1. Size:1163K  rohm
 ral045p01.pdf pdf_icon

RAL045P01

Data Sheet 1.5V Drive Pch MOSFET RAL045P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TCR 2 Basic ordering unit (pieces)... See More ⇒

Detailed specifications: R6025ANZ, R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, RAL025P01, RAL035P01, STP80NF70, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25, RCD100N20, RCJ330N25

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