RAQ045P01 MOSFET. Datasheet pdf. Equivalent
Type Designator: RAQ045P01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 12 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TSMT6
RAQ045P01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RAQ045P01 Datasheet (PDF)
1.1. raq045p01.pdf 
Size:1160K _rohm
Data Sheet 1.5V Drive Pch MOSFET RAQ045P01 ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 ?Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SC ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (6) (5) (4) Type Code TCR Basic ordering unit (pieces) 3000 ?2 RAQ045P01 ?
Datasheet: R6046ANZ , R6046FNZ , R8002ANX , R8008ANX , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , IRFP4232 , RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 .
