All MOSFET. RAQ045P01 Datasheet

 

RAQ045P01 Datasheet and Replacement


   Type Designator: RAQ045P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSMT6
 

 RAQ045P01 substitution

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RAQ045P01 Datasheet (PDF)

 ..1. Size:1160K  rohm
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RAQ045P01

Data Sheet1.5V Drive Pch MOSFET RAQ045P01 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT6Features1) Low On-resistance.2) Small high power package.3) Low voltage drive.(1.5V)Abbreviated symbol : SC ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)Type Code TCRBasic ordering unit (pieces) 3000

Datasheet: R6046ANZ , R6046FNZ , R8002ANX , R8008ANX , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , IRF1407 , RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 .

History: IRLU2905PBF | STH240N75F3-2 | HSBB3214 | RCD075N20 | IPI65R280C6 | HSBB4115 | NCE25P60K

Keywords - RAQ045P01 MOSFET datasheet

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