RAQ045P01 Specs and Replacement

Type Designator: RAQ045P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSMT6

RAQ045P01 substitution

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RAQ045P01 datasheet

 ..1. Size:1160K  rohm
 raq045p01.pdf pdf_icon

RAQ045P01

Data Sheet 1.5V Drive Pch MOSFET RAQ045P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol SC Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TCR Basic ordering unit (pieces) 3000 ... See More ⇒

Detailed specifications: R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, RAL025P01, RAL035P01, RAL045P01, IRFP450, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25, RCD100N20, RCJ330N25, RCJ450N20

Keywords - RAQ045P01 MOSFET specs

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