RCD060N25 Specs and Replacement

Type Designator: RCD060N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm

Package: CPT3 SC63 SOT428

RCD060N25 substitution

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RCD060N25 datasheet

 ..1. Size:1154K  rohm
 rcd060n25.pdf pdf_icon

RCD060N25

Data Sheet 10V Drive Nch MOSFET RCD060N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

Detailed specifications: R8008ANX, RAF040P01, RAL025P01, RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, BS170, RCD075N20, RCD080N25, RCD100N20, RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25

Keywords - RCD060N25 MOSFET specs

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