All MOSFET. RCD060N25 Datasheet

 

RCD060N25 Datasheet and Replacement


   Type Designator: RCD060N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm
   Package: CPT3 SC63 SOT428
 

 RCD060N25 substitution

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RCD060N25 Datasheet (PDF)

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RCD060N25

Data Sheet10V Drive Nch MOSFET RCD060N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

Datasheet: R8008ANX , RAF040P01 , RAL025P01 , RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , 18N50 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 , RCX050N25 , RCX080N20 , RCX080N25 .

History: SMM2348ES | WMS175N10LG4

Keywords - RCD060N25 MOSFET datasheet

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