RCJ330N25 Specs and Replacement

Type Designator: RCJ330N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: LPTS

RCJ330N25 substitution

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RCJ330N25 datasheet

 ..1. Size:1236K  rohm
 rcj330n25.pdf pdf_icon

RCJ330N25

Data Sheet 10V Drive Nch MOSFET RCJ330N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2.54 0.4 2) Fast switching speed. 0.78 2.7 5.08 3) Gate-source voltage (1) (2) (3) VGSS garanteed to be 30V . 4) High package power. Application Inner circuit Switching 1 Packaging specifications... See More ⇒

 ..2. Size:254K  inchange semiconductor
 rcj330n25.pdf pdf_icon

RCJ330N25

isc N-Channel MOSFET Transistor RCJ330N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25, RCD100N20, 2SK3568, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, RCX120N20, RCX120N25, RCX160N20, RCX330N25

Keywords - RCJ330N25 MOSFET specs

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