RCJ450N20 Datasheet and Replacement
Type Designator: RCJ450N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: LPTS
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RCJ450N20 Datasheet (PDF)
rcj450n20.pdf

Data Sheet10V Drive Nch MOSFET RCJ450N20 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High-speed switching.2.54 0.40.782.73) Wide range of SOA. 5.08(1) (2) (3)4) Drive circuits can be simple.5) Parallel use is easy. ApplicationSwitching Packaging specifications Inner circu
rcj450n20.pdf

isc N-Channel MOSFET Transistor RCJ450N20FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RCX220N25 | TK160F10N1 | TK12A55D
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History: RCX220N25 | TK160F10N1 | TK12A55D



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