RCX160N20 Specs and Replacement
Type Designator: RCX160N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
Package: TO220FM
RCX160N20 substitution
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RCX160N20 datasheet
rcx160n20.pdf
Data Sheet 10V Drive Nch MOSFET RCX160N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un... See More ⇒
rcx160n20.pdf
isc N-Channel MOSFET Transistor RCX160N20 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: RCD100N20, RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, RCX120N20, RCX120N25, 20N50, RCX330N25, RCX450N20, RHK005N03, RHP020N06, RHP030N03, RJK005N03, RJP020N06, RK7002B
Keywords - RCX160N20 MOSFET specs
RCX160N20 cross reference
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