RCX450N20 Datasheet and Replacement
Type Designator: RCX450N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO220FM
RCX450N20 Datasheet (PDF)
rcx450n20.pdf

Data Sheet10V Drive Nch MOSFET RCX450N20 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Low on-resistance. 1.21.32) High speed switching.3) Gate-source voltage VGSS garanteed to be 30V 0.82.54 2.54 0.75 2.64) High Power Package (TO-220FM).(1) (2) (3) Application Inner circuitSwitching1 P
rcx450n20.pdf

isc N-Channel MOSFET Transistor RCX450N20FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DH150N12 | SRC65R100B
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History: DH150N12 | SRC65R100B



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