RHP030N03 Datasheet and Replacement
Type Designator: RHP030N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: MPT3
RHP030N03 substitution
RHP030N03 Datasheet (PDF)
rhp030n03.pdf

RHP030N03 Transistors 4V Drive Nch MOSFET RHP030N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) 4V drive. 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : KZ Packaging specifications Inner circuit (3)Package TapingType Code
rhp030n03t100.pdf

RHP030N03 Transistors 4V Drive Nch MOSFET RHP030N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) 4V drive. 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : KZ Packaging specifications Inner circuit (3)Package TapingType Code
Datasheet: RCX080N25 , RCX120N20 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , RHK005N03 , RHP020N06 , IRF830 , RJK005N03 , RJP020N06 , RK7002B , RMW130N03 , RMW150N03 , RMW180N03 , RMW200N03 , RMW280N03 .
History: IPP126N10N3G | HSH15810 | CJ2302S | 50N06L-TA3-T | WMO18N65EM
Keywords - RHP030N03 MOSFET datasheet
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History: IPP126N10N3G | HSH15810 | CJ2302S | 50N06L-TA3-T | WMO18N65EM



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