RMW200N03 Specs and Replacement

Type Designator: RMW200N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PSOP8

RMW200N03 substitution

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RMW200N03 datasheet

 ..1. Size:1125K  rohm
 rmw200n03.pdf pdf_icon

RMW200N03

Data Sheet 4.5V Drive Nch MOSFET RMW200N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET PSOP8 (8) (7) (6) (5) Features 0 0.1 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4) 0.22 0.4 3) Low voltage drive(4.5V drive). 0.9 1.27 5.0 Application Switching Packaging specifications Inner circuit... See More ⇒

Detailed specifications: RHP020N06, RHP030N03, RJK005N03, RJP020N06, RK7002B, RMW130N03, RMW150N03, RMW180N03, IRF1405, RMW280N03, RP1A090ZP, RP1E070XN, RP1E075RP, RP1E090RP, RP1E090XN, RP1E100RP, RP1E100XN

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