All MOSFET. RMW200N03 Datasheet

 

RMW200N03 Datasheet and Replacement


   Type Designator: RMW200N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PSOP8
 

 RMW200N03 substitution

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RMW200N03 Datasheet (PDF)

 ..1. Size:1125K  rohm
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RMW200N03

Data Sheet4.5V Drive Nch MOSFETRMW200N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETPSOP8(8) (7) (6) (5)Features0~0.11) High Power package(PSOP8).2) High-speed switching,Low On-resistance.1pin mark(1) (2) (3) (4)0.220.43) Low voltage drive(4.5V drive).0.91.275.0 ApplicationSwitching Packaging specifications Inner circuit

Datasheet: RHP020N06 , RHP030N03 , RJK005N03 , RJP020N06 , RK7002B , RMW130N03 , RMW150N03 , RMW180N03 , NCEP15T14 , RMW280N03 , RP1A090ZP , RP1E070XN , RP1E075RP , RP1E090RP , RP1E090XN , RP1E100RP , RP1E100XN .

History: JFAM20N65C

Keywords - RMW200N03 MOSFET datasheet

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