RP1A090ZP Datasheet and Replacement
Type Designator: RP1A090ZP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: MPT6
RP1A090ZP substitution
RP1A090ZP Datasheet (PDF)
rp1a090zp.pdf
1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord
rp1a090zptr.pdf
1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord
Datasheet: RJK005N03 , RJP020N06 , RK7002B , RMW130N03 , RMW150N03 , RMW180N03 , RMW200N03 , RMW280N03 , RU7088R , RP1E070XN , RP1E075RP , RP1E090RP , RP1E090XN , RP1E100RP , RP1E100XN , RP1E125XN , RP1H065SP .
History: FCB20N60F085
Keywords - RP1A090ZP MOSFET datasheet
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History: FCB20N60F085
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