All MOSFET. RP1A090ZP Datasheet

 

RP1A090ZP Datasheet and Replacement


   Type Designator: RP1A090ZP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: MPT6
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RP1A090ZP Datasheet (PDF)

 ..1. Size:315K  rohm
 rp1a090zp.pdf pdf_icon

RP1A090ZP

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord

 0.1. Size:313K  rohm
 rp1a090zptr.pdf pdf_icon

RP1A090ZP

1.5V Drive Pch MOSFET RP1A090ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low Voltage Drive(1.5V drive).2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ord

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

Keywords - RP1A090ZP MOSFET datasheet

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