All MOSFET. RP1L080SN Datasheet

 

RP1L080SN Datasheet and Replacement


   Type Designator: RP1L080SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: MPT6
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RP1L080SN Datasheet (PDF)

 ..1. Size:1186K  rohm
 rp1l080sn.pdf pdf_icon

RP1L080SN

Data Sheet4V Drive Nch MOSFET RP1L080SNStructure Dimensions (Unit : mm)Silicon N-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low on-resistance.2) Fast switching speed.(1) (2) (3)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBas

 9.1. Size:1167K  rohm
 rp1l055sn.pdf pdf_icon

RP1L080SN

Data Sheet4V Drive Nch MOSFET RP1L055SN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic order

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History: HCD80R1K4 | VBE1104N | FQI15P12TU | WMB115N15HG4 | IRFSL4410Z | MTDK3S6R | SSM3K15AMFV

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