RQ1A060ZP Specs and Replacement

Type Designator: RQ1A060ZP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TSMT8

RQ1A060ZP substitution

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RQ1A060ZP datasheet

 ..1. Size:219K  rohm
 rq1a060zp.pdf pdf_icon

RQ1A060ZP

1.5V Drive Pch MOSFET RQ1A060ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 3.0 0.8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package. 0.17 (1) (2) (3) (4) 3) Low voltage drive. (1.5V) 0.65 0.32 Abbreviated symbol YH Each lead has same dimensions Applications Equivalent circuit Switching (8) (7) (6) (5) Packaging specifi... See More ⇒

 0.1. Size:650K  rohm
 rq1a060zptr.pdf pdf_icon

RQ1A060ZP

RQ1A060ZP Pch -12V -6A Power MOSFET Datasheet lOutline (8) VDSS (7) -12V TSMT8 (6) (5) RDS(on) (Max.) 23mW (1) ID -6A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) -1.5V Drive. (2) Source (6) Drain (3) Source (7) Drain 3) Built-in G-S Protection Diode. (4) Gate (8) Drain *1 ESD PROTECTION DIODE 4) Small S... See More ⇒

 9.1. Size:226K  rohm
 rq1a070zptr.pdf pdf_icon

RQ1A060ZP

1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) Applications Each lead has same dimensions Abbreviated symbol YJ Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type C... See More ⇒

 9.2. Size:1197K  rohm
 rq1a070ap.pdf pdf_icon

RQ1A060ZP

Data Sheet 1.5V Drive Pch MOSFET RQ1A070AP Structure Dimensions (Unit mm) TSMT8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSMT8). Abbreviated symbol SG Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (... See More ⇒

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Detailed specifications: RP1E090RP, RP1E090XN, RP1E100RP, RP1E100XN, RP1E125XN, RP1H065SP, RP1L055SN, RP1L080SN, AOD4184A, RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN, RQ1E050RP, RQ1E070RP, RQ1E075XN, RQ1E100XN

Keywords - RQ1A060ZP MOSFET specs

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