RQ1C065UN Specs and Replacement

Type Designator: RQ1C065UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TSMT8

RQ1C065UN substitution

- MOSFET ⓘ Cross-Reference Search

 

RQ1C065UN datasheet

 ..1. Size:328K  rohm
 rq1c065un.pdf pdf_icon

RQ1C065UN

1.5V Drive Nch MOSFET RQ1C065UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol VB Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR Basi... See More ⇒

 9.1. Size:343K  rohm
 rq1c075un.pdf pdf_icon

RQ1C065UN

1.5V Drive Nch MOSFET RQ1C075UN Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol XH Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Ba... See More ⇒

Detailed specifications: RP1E100XN, RP1E125XN, RP1H065SP, RP1L055SN, RP1L080SN, RQ1A060ZP, RQ1A070AP, RQ1A070ZP, IRFP064N, RQ1C075UN, RQ1E050RP, RQ1E070RP, RQ1E075XN, RQ1E100XN, RRF015P03, RRH040P03, RRH050P03

Keywords - RQ1C065UN MOSFET specs

 RQ1C065UN cross reference

 RQ1C065UN equivalent finder

 RQ1C065UN pdf lookup

 RQ1C065UN substitution

 RQ1C065UN replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs