RQ1E100XN Specs and Replacement

Type Designator: RQ1E100XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TSMT8

RQ1E100XN substitution

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RQ1E100XN datasheet

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RQ1E100XN

Data Sheet 4V Drive Nch MOSFET RQ1E100XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8). Abbreviated symbol XS Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping... See More ⇒

Detailed specifications: RQ1A060ZP, RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN, RQ1E050RP, RQ1E070RP, RQ1E075XN, IRF740, RRF015P03, RRH040P03, RRH050P03, RRH075P03, RRH090P03, RRH100P03, RRH140P03, RRL025P03

Keywords - RQ1E100XN MOSFET specs

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