All MOSFET. RQ1E100XN Datasheet

 

RQ1E100XN Datasheet and Replacement


   Type Designator: RQ1E100XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TSMT8
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RQ1E100XN Datasheet (PDF)

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RQ1E100XN

Data Sheet4V Drive Nch MOSFETRQ1E100XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT8).Abbreviated symbol : XS ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Taping

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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