All MOSFET. RQ1E100XN Datasheet

 

RQ1E100XN Datasheet and Replacement


   Type Designator: RQ1E100XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TSMT8
 

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RQ1E100XN Datasheet (PDF)

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RQ1E100XN

Data Sheet4V Drive Nch MOSFETRQ1E100XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT8).Abbreviated symbol : XS ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package Taping

Datasheet: RQ1A060ZP , RQ1A070AP , RQ1A070ZP , RQ1C065UN , RQ1C075UN , RQ1E050RP , RQ1E070RP , RQ1E075XN , IRF740 , RRF015P03 , RRH040P03 , RRH050P03 , RRH075P03 , RRH090P03 , RRH100P03 , RRH140P03 , RRL025P03 .

History: UTD436 | IRFPS40N60KPBF

Keywords - RQ1E100XN MOSFET datasheet

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