RRF015P03 Specs and Replacement
Type Designator: RRF015P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TUMT3
RRF015P03 substitution
- MOSFET ⓘ Cross-Reference Search
RRF015P03 datasheet
rrf015p03.pdf
4V Drive Pch MOSFET RRF015P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) High power package. 3) 4V drive. Abbreviated symbol UJ Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 2 RRF015P03 (1) 1 Absolut... See More ⇒
Detailed specifications: RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN, RQ1E050RP, RQ1E070RP, RQ1E075XN, RQ1E100XN, IRF840, RRH040P03, RRH050P03, RRH075P03, RRH090P03, RRH100P03, RRH140P03, RRL025P03, RRL035P03
Keywords - RRF015P03 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AM3441P | AM30N03-40D
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