RRL025P03 Specs and Replacement

Type Designator: RRL025P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TUMT6

RRL025P03 substitution

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RRL025P03 datasheet

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 rrl025p03.pdf pdf_icon

RRL025P03

4V Drive Pch MOSFET RRL025P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) High speed switching. Applications Switching Abbreviated symbol UA Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 2 RRL025P03 1 Absolute maximum ratings (Ta=2... See More ⇒

Detailed specifications: RQ1E100XN, RRF015P03, RRH040P03, RRH050P03, RRH075P03, RRH090P03, RRH100P03, RRH140P03, IRF640, RRL035P03, RRQ030P03, RRQ045P03, RRR015P03, RRR030P03, RRR040P03, RSC002P03, RSD050N06

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