RRL025P03 Datasheet and Replacement
Type Designator: RRL025P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TUMT6
RRL025P03 substitution
RRL025P03 Datasheet (PDF)
rrl025p03.pdf
4V Drive Pch MOSFET RRL025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) High speed switching. Applications Switching Abbreviated symbol : UA Packaging specifications Inner circuit (6) (5) (4)Package TapingType Code TRBasic ordering unit (pieces) 30002RRL025P03 1 Absolute maximum ratings (Ta=2
Datasheet: RQ1E100XN , RRF015P03 , RRH040P03 , RRH050P03 , RRH075P03 , RRH090P03 , RRH100P03 , RRH140P03 , IRF640 , RRL035P03 , RRQ030P03 , RRQ045P03 , RRR015P03 , RRR030P03 , RRR040P03 , RSC002P03 , RSD050N06 .
History: FDMA3028N | FDMC6679AZ
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDMA3028N | FDMC6679AZ
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