All MOSFET. RRQ030P03 Datasheet

 

RRQ030P03 Datasheet and Replacement


   Type Designator: RRQ030P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSMT6
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RRQ030P03 Datasheet (PDF)

 ..1. Size:216K  rohm
 rrq030p03.pdf pdf_icon

RRQ030P03

4V Drive Pch MOSFET RRQ030P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.90.95 0.95 0.7(6) (5) (4) Features 1) Low On-resistance. 0~0.12) High Power Package. (1) (2) (3)1pin mark3) High speed switching. 0.160.4Each lead has same dimensionsAbbreviated symbol : UA Applications Equivalent circuit Switching (6) (5)

 0.1. Size:834K  cn vbsemi
 rrq030p03tr.pdf pdf_icon

RRQ030P03

RRQ030P03TRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFH110N10P | 2SK2222

Keywords - RRQ030P03 MOSFET datasheet

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