RRQ045P03 Specs and Replacement

Type Designator: RRQ045P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TSMT6

RRQ045P03 substitution

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RRQ045P03 datasheet

 ..1. Size:215K  rohm
 rrq045p03.pdf pdf_icon

RRQ045P03

4V Drive Pch MOSFET RRQ045P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 Features (6) (5) (4) 1) Low On-resistance. 2) High Power Package. 3) High speed switching. 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Application Each lead has same dimensions Switching Abbreviated symbol UB Packaging specifications In... See More ⇒

Detailed specifications: RRH050P03, RRH075P03, RRH090P03, RRH100P03, RRH140P03, RRL025P03, RRL035P03, RRQ030P03, IRFB4110, RRR015P03, RRR030P03, RRR040P03, RSC002P03, RSD050N06, RSD050N10, RSD080N06, RSD080P05

Keywords - RRQ045P03 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs