RRQ045P03 Datasheet and Replacement
Type Designator: RRQ045P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSMT6
RRQ045P03 substitution
RRQ045P03 Datasheet (PDF)
rrq045p03.pdf
4V Drive Pch MOSFET RRQ045P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT61.0MAX2.90.851.90.95 0.95 0.7 Features (6) (5) (4)1) Low On-resistance. 2) High Power Package. 3) High speed switching. 0~0.1(1) (2) (3)1pin mark0.160.4 Application Each lead has same dimensionsSwitching Abbreviated symbol : UB Packaging specifications In
Datasheet: RRH050P03 , RRH075P03 , RRH090P03 , RRH100P03 , RRH140P03 , RRL025P03 , RRL035P03 , RRQ030P03 , IRFB4110 , RRR015P03 , RRR030P03 , RRR040P03 , RSC002P03 , RSD050N06 , RSD050N10 , RSD080N06 , RSD080P05 .
History: FDD6637F085
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: FDD6637F085
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