RSC002P03 Specs and Replacement

Type Designator: RSC002P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SST3 SOT23

RSC002P03 substitution

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RSC002P03 datasheet

 ..1. Size:1174K  rohm
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RSC002P03

Data Sheet 4V Drive Pch MOSFET RSC002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET SST3 Features 1) Low on-resistance. 2) Low-voltage drive (4V). Abbreviated symbol WP Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T316 Basic ordering unit (pieces) 3000 1 RSC002P03 2 (2) (... See More ⇒

Detailed specifications: RRH140P03, RRL025P03, RRL035P03, RRQ030P03, RRQ045P03, RRR015P03, RRR030P03, RRR040P03, IRFB4227, RSD050N06, RSD050N10, RSD080N06, RSD080P05, RSD100N10, RSD140P06, RSD150N06, RSD160P05

Keywords - RSC002P03 MOSFET specs

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