RSD100N10 Specs and Replacement

Type Designator: RSD100N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: CPT3 SC63 SOT428

RSD100N10 substitution

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RSD100N10 datasheet

 ..1. Size:1155K  rohm
 rsd100n10.pdf pdf_icon

RSD100N10

Data Sheet 4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Bas... See More ⇒

 0.1. Size:1374K  rohm
 rsd100n10fra.pdf pdf_icon

RSD100N10

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD100N10 RSD100N10FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit Packag... See More ⇒

Detailed specifications: RRR015P03, RRR030P03, RRR040P03, RSC002P03, RSD050N06, RSD050N10, RSD080N06, RSD080P05, 2N7000, RSD140P06, RSD150N06, RSD160P05, RSD175N10, RSD200N05, RSD200N10, RSE002N06, RSE002P03

Keywords - RSD100N10 MOSFET specs

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