All MOSFET. RSD100N10 Datasheet

 

RSD100N10 Datasheet and Replacement


   Type Designator: RSD100N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: CPT3 SC63 SOT428
 

 RSD100N10 substitution

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RSD100N10 Datasheet (PDF)

 ..1. Size:1155K  rohm
 rsd100n10.pdf pdf_icon

RSD100N10

Data Sheet4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBas

 0.1. Size:1374K  rohm
 rsd100n10fra.pdf pdf_icon

RSD100N10

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD100N10RSD100N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuitPackag

Datasheet: RRR015P03 , RRR030P03 , RRR040P03 , RSC002P03 , RSD050N06 , RSD050N10 , RSD080N06 , RSD080P05 , IRF9540 , RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 .

History: STI18N65M2 | HYG023N03LR1U | MTN2N70FP | AS2303 | MTN2304N3 | DMNH10H028SCT | NCE30P40K

Keywords - RSD100N10 MOSFET datasheet

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