All MOSFET. RSD100N10 Datasheet

 

RSD100N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSD100N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: CPT3 SC63 SOT428

 RSD100N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSD100N10 Datasheet (PDF)

 ..1. Size:1155K  rohm
 rsd100n10.pdf

RSD100N10 RSD100N10

Data Sheet4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBas

 0.1. Size:1374K  rohm
 rsd100n10fra.pdf

RSD100N10 RSD100N10

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD100N10RSD100N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuitPackag

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NTMS4802NR2G

 

 
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