All MOSFET. RSD140P06 Datasheet

 

RSD140P06 Datasheet and Replacement


   Type Designator: RSD140P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: CPT3 SC63 SOT428
 

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RSD140P06 Datasheet (PDF)

 ..1. Size:1213K  rohm
 rsd140p06.pdf pdf_icon

RSD140P06

Data Sheet4V Drive Pch MOSFET RSD140P06Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir

 0.1. Size:1413K  rohm
 rsd140p06fra.pdf pdf_icon

RSD140P06

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD140P06RSD140P06FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack

Datasheet: RRR030P03 , RRR040P03 , RSC002P03 , RSD050N06 , RSD050N10 , RSD080N06 , RSD080P05 , RSD100N10 , IRFB4115 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 , RSF010P05 .

History: HCD6NC70S | AP2N7002K-HF | WFF630 | FQI2N90TU | FTK830F | AOB298L | PH1955L

Keywords - RSD140P06 MOSFET datasheet

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