RSD150N06 Specs and Replacement
Type Designator: RSD150N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
RSD150N06 substitution
- MOSFET ⓘ Cross-Reference Search
RSD150N06 datasheet
rsd150n06.pdf
Data Sheet 4V Drive Nch MOSFET RSD150N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging specifications Inner ci... See More ⇒
rsd150n06fra.pdf
Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD150N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging spec... See More ⇒
Detailed specifications: RRR040P03, RSC002P03, RSD050N06, RSD050N10, RSD080N06, RSD080P05, RSD100N10, RSD140P06, 8205A, RSD160P05, RSD175N10, RSD200N05, RSD200N10, RSE002N06, RSE002P03, RSF010P05, RSF014N03
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
