RSD160P05 Datasheet and Replacement
Type Designator: RSD160P05
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: CPT3 SC63 SOT428
RSD160P05 substitution
RSD160P05 Datasheet (PDF)
rsd160p05.pdf

Data Sheet4V Drive Pch MOSFET RSD160P05Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir
rsd160p05fra.pdf

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD160P05RSD160P05FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack
Datasheet: RSC002P03 , RSD050N06 , RSD050N10 , RSD080N06 , RSD080P05 , RSD100N10 , RSD140P06 , RSD150N06 , AON7408 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 , RSF010P05 , RSF014N03 , RSF015N06 .
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