RSD160P05 Specs and Replacement

Type Designator: RSD160P05

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: CPT3 SC63 SOT428

RSD160P05 substitution

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RSD160P05 datasheet

 ..1. Size:1211K  rohm
 rsd160p05.pdf pdf_icon

RSD160P05

Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner cir... See More ⇒

 0.1. Size:1392K  rohm
 rsd160p05fra.pdf pdf_icon

RSD160P05

Data Sheet AEC-Q101 Qualified 4V Drive Pch MOSFET RSD160P05 RSD160P05FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Pack... See More ⇒

Detailed specifications: RSC002P03, RSD050N06, RSD050N10, RSD080N06, RSD080P05, RSD100N10, RSD140P06, RSD150N06, 7N65, RSD175N10, RSD200N05, RSD200N10, RSE002N06, RSE002P03, RSF010P05, RSF014N03, RSF015N06

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