All MOSFET. RSD200N05 Datasheet

 

RSD200N05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSD200N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: CPT3 SC63 SOT428

 RSD200N05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSD200N05 Datasheet (PDF)

 ..1. Size:1197K  rohm
 rsd200n05.pdf

RSD200N05 RSD200N05

Data Sheet4V Drive Nch MOSFET RSD200N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitchingPackaging specifications Inner circu

 7.1. Size:241K  rohm
 rsd200n10.pdf

RSD200N05 RSD200N05

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 7.2. Size:239K  rohm
 rsd200n10tl.pdf

RSD200N05 RSD200N05

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 9.1. Size:366K  rohm
 rsd201n10.pdf

RSD200N05 RSD200N05

RSD201N10 Nch 100V 20A Power MOSFET DatasheetlOutlineVDSS100VCPT3(SC-63)RDS(on) (Max.)46mW(3) ID20A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.*1 (1) Gate 2) Fast switching speed.(2) Drain (1) (3) Source 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2 BODY DIODE 5) Pb-f

 9.2. Size:892K  rohm
 rsd201n10fra.pdf

RSD200N05 RSD200N05

RSD201N10FRA Nch 100V 20A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS100VCPT3(SC-63)RDS(on) (Max.)46mW(3) ID20A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.*1 (1) Gate 2) Fast switching speed.(2) Drain (1) (3) Source 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRLB8721 | PMPB20XNEA | PMDXB950UPE | RF1S40N10SM

 

 
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