RSJ10HN06 Specs and Replacement

Type Designator: RSJ10HN06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 470 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: LPTS

RSJ10HN06 substitution

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RSJ10HN06 datasheet

 ..1. Size:1245K  rohm
 rsj10hn06.pdf pdf_icon

RSJ10HN06

Data Sheet 4V Drive Nch MOSFET RSJ10HN06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Built-in G-S Protection Diode. 2.54 0.4 0.78 3) High power Package 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic order... See More ⇒

Detailed specifications: RSE002N06, RSE002P03, RSF010P05, RSF014N03, RSF015N06, RSH065N06, RSH070N05, RSH070P05, K3569, RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10, RSJ650N10, RSM002N06, RSM002P03

Keywords - RSJ10HN06 MOSFET specs

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