RSJ250P10 Specs and Replacement

Type Designator: RSJ250P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: LPTS

RSJ250P10 substitution

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RSJ250P10 datasheet

 ..1. Size:1188K  rohm
 rsj250p10.pdf pdf_icon

RSJ250P10

Data Sheet 4V Drive Pch MOSFET RSJ250P10 Structure Dimensions (Unit mm) Silicon P-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Built-in G-S Protection Diode. 2.54 0.4 0.78 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 1000... See More ⇒

 ..2. Size:339K  inchange semiconductor
 rsj250p10.pdf pdf_icon

RSJ250P10

isc P-Channel MOSFET Transistor RSJ250P10 FEATURES Drain Current I = -25A@ T =25 D C Drain Source Voltage V = -100V(Min) DSS Static Drain-Source On-Resistance R = 63m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for ser... See More ⇒

Detailed specifications: RSE002P03, RSF010P05, RSF014N03, RSF015N06, RSH065N06, RSH070N05, RSH070P05, RSJ10HN06, IRFP260, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10, RSJ650N10, RSM002N06, RSM002P03, RSQ015N06

Keywords - RSJ250P10 MOSFET specs

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