All MOSFET. RSJ250P10 Datasheet

 

RSJ250P10 Datasheet and Replacement


   Type Designator: RSJ250P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: LPTS
 

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RSJ250P10 Datasheet (PDF)

 ..1. Size:1188K  rohm
 rsj250p10.pdf pdf_icon

RSJ250P10

Data Sheet4V Drive Pch MOSFET RSJ250P10 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) Built-in G-S Protection Diode.2.54 0.40.782.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBasic ordering unit (pieces) 1000

 ..2. Size:339K  inchange semiconductor
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RSJ250P10

isc P-Channel MOSFET Transistor RSJ250P10FEATURESDrain Current I = -25A@ T =25D CDrain Source Voltage: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 63m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for ser

Datasheet: RSE002P03 , RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , 8205A , RSJ300N10 , RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 .

History: STP11N52K3 | RSD050N10FRA | SIHFB9N65A | SUM110N08-07P | IRFS621 | CS5NB90 | SIHF30N60E

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