All MOSFET. RSJ300N10 Datasheet

 

RSJ300N10 Datasheet and Replacement


   Type Designator: RSJ300N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: LPTS
 

 RSJ300N10 substitution

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RSJ300N10 Datasheet (PDF)

 ..1. Size:1171K  rohm
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RSJ300N10

Data Sheet4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) Built-in G-S Protection Diode.2.54 0.40.782.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBasic ordering unit (pieces) 1000

Datasheet: RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , 2SK3568 , RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 .

History: AON6278 | IRF5210LPBF | DMT6009LCT | UTT6NP10G-S08-R | SIA537EDJ | CS10N70FA9D | QM2N7002E3K1

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