RSJ550N10 Specs and Replacement

Type Designator: RSJ550N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: LPTS

RSJ550N10 substitution

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RSJ550N10 datasheet

 ..1. Size:1125K  rohm
 rsj550n10.pdf pdf_icon

RSJ550N10

Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High Power Package. 2.54 0.4 0.78 2.7 3) 4V drive. 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 10... See More ⇒

Detailed specifications: RSH065N06, RSH070N05, RSH070P05, RSJ10HN06, RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, K4145, RSJ650N10, RSM002N06, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10

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