All MOSFET. RSJ550N10 Datasheet

 

RSJ550N10 Datasheet and Replacement


   Type Designator: RSJ550N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: LPTS
 

 RSJ550N10 substitution

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RSJ550N10 Datasheet (PDF)

 ..1. Size:1125K  rohm
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RSJ550N10

Data Sheet4V Drive Nch MOSFET RSJ550N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High Power Package.2.54 0.40.782.73) 4V drive. 5.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBasic ordering unit (pieces) 10

Datasheet: RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , RSJ300N10 , RSJ400N06 , RSJ450N04 , IRFB3607 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 .

History: SP8K80 | CS9N90F | SLP13N50C | 2SK3780-01 | SI2301-TP | AP6C036M | 2SK1652

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