All MOSFET. RSJ650N10 Datasheet

 

RSJ650N10 Datasheet and Replacement


   Type Designator: RSJ650N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 785 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: LPTS
 

 RSJ650N10 substitution

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RSJ650N10 Datasheet (PDF)

 ..1. Size:1121K  rohm
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RSJ650N10

Data Sheet4V Drive Nch MOSFET RSJ650N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1) Low on-resistance.1.242) High power package.2.54 0.40.783) 4V drive.2.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBasic ordering unit (pieces) 1

Datasheet: RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , RSJ300N10 , RSJ400N06 , RSJ450N04 , RSJ550N10 , TK10A60D , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 .

History: PH6325L | AOB254L | IPP110N20N3G | AOTL66912Q | OSG60R600DMZF | AP86T02GJ-HF | AOB20S60

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