RSJ650N10 Specs and Replacement

Type Designator: RSJ650N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 785 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: LPTS

RSJ650N10 substitution

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RSJ650N10 datasheet

 ..1. Size:1121K  rohm
 rsj650n10.pdf pdf_icon

RSJ650N10

Data Sheet 4V Drive Nch MOSFET RSJ650N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) High power package. 2.54 0.4 0.78 3) 4V drive. 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 1... See More ⇒

Detailed specifications: RSH070N05, RSH070P05, RSJ10HN06, RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10, 13N50, RSM002N06, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.