RSM002N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSM002N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 0.25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 4.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
VMT3
RSM002N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSM002N06
Datasheet (PDF)
..1. Size:171K rohm
rsm002n06.pdf 
2.5V Drive Nch MOSFET RSM002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RK ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T2LBasic ordering unit (pieces) 8000RSM002N06
8.1. Size:62K rohm
rsm002p03t2l.pdf
RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
8.2. Size:64K rohm
rsm002p03.pdf
RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
Datasheet: WPB4002
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