RSM002N06 Specs and Replacement

Type Designator: RSM002N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 4.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: VMT3

RSM002N06 substitution

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RSM002N06 datasheet

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 rsm002n06.pdf pdf_icon

RSM002N06

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 8.1. Size:62K  rohm
 rsm002p03t2l.pdf pdf_icon

RSM002N06

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 3) 4V drive. 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol WP Applications Switching Packaging specifications Inner circuit Package Taping... See More ⇒

 8.2. Size:64K  rohm
 rsm002p03.pdf pdf_icon

RSM002N06

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET VMT3 1.2 0.32 Features (3) 1) Low On-resistance. 2) Small package (VMT3). (1)(2) 0.22 0.13 0.4 0.4 3) 4V drive. 0.5 0.8 (1)Gate (2)Source (3)Drain Abbreviated symbol WP Applications Switching Packaging specifications Inner circuit Package Taping... See More ⇒

Detailed specifications: RSH070P05, RSJ10HN06, RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10, RSJ650N10, AON7410, RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03

Keywords - RSM002N06 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.