RSM002P03 Datasheet and Replacement
Type Designator: RSM002P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: VMT3
RSM002P03 substitution
RSM002P03 Datasheet (PDF)
rsm002p03.pdf

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
rsm002p03t2l.pdf

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET VMT31.20.32 Features (3)1) Low On-resistance. 2) Small package (VMT3). (1)(2)0.220.130.4 0.43) 4V drive. 0.50.8(1)Gate(2)Source(3)Drain Abbreviated symbol : WP ApplicationsSwitching Packaging specifications Inner circuit Package Taping
rsm002n06.pdf

2.5V Drive Nch MOSFET RSM002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3) Low voltage drive(2.5V drive).Abbreviated symbol : RK ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode T2LBasic ordering unit (pieces) 8000RSM002N06
Datasheet: RSJ10HN06 , RSJ250P10 , RSJ300N10 , RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , 4N60 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 .
History: FTK2N65P
Keywords - RSM002P03 MOSFET datasheet
RSM002P03 cross reference
RSM002P03 equivalent finder
RSM002P03 lookup
RSM002P03 substitution
RSM002P03 replacement
History: FTK2N65P



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