RSQ020N03
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSQ020N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.096
Ohm
Package:
TSMT6
RSQ020N03
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSQ020N03
Datasheet (PDF)
..1. Size:65K rohm
rsq020n03.pdf 
RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviated symbol : Q
0.1. Size:1074K rohm
rsq020n03fra.pdf
RSQ020N03FRA Nch 30V 2A Power MOSFET DatasheetAEC-Q101 QualifiedlOutline(6) VDSS30V(5) TSMT6(4) RDS(on) (Max.)134mW(1) ID2.0A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plat
0.2. Size:63K rohm
rsq020n03tr.pdf
RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)1pin mark0.160.4 ApplicationsEach lead has same dimensionsSwitching Abbreviated symbol : Q
9.1. Size:70K rohm
rsq025p03tr.pdf
RSQ025P03TransistorDC-DC Converter (-30V, -2.5A)RSQ025P03 External dimensions (Units : mm) Features 1) Low On-resistance.(120m at 4.5V)2) High Power Package.(PD=1.25W)TSMT62.83) High speed switching.1.64) Low voltage drive.(4V)Each lead has same dimensionsAbbreviatedsymbol : TP ApplicationsDC-DC converter Equivalent circuit Struct
9.2. Size:961K rohm
rsq025p03fra.pdf
RSQ025P03FRARSQ025P03TransistorAEC-Q101 Qualified4V Drive Pch MOS FET RSQ025P03FRARSQ025P03 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(120m at 4.5V) 2) High Power Package.(PD=1.25W) 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage
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