RSR030N06 Specs and Replacement

Type Designator: RSR030N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TSMT3

RSR030N06 substitution

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RSR030N06 datasheet

 ..1. Size:217K  rohm
rsr030n06.pdf pdf_icon

RSR030N06

4V Drive Nch MOSFET RSR030N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) Low On-resistance. ( ) ( ) 1 2 2) Small Surface Mount Package (TSMT3). 0.95 0.95 0.16 1.9 Abbreviated symbol PY Application Inner circuit (3) Switching Packaging specifications 2 Package Taping (1) Type Code TL ... See More ⇒

 0.1. Size:600K  rohm
rsr030n06tl.pdf pdf_icon

RSR030N06

RSR030N06 Nch 60V 3A Power MOSFET Datasheet lOutline VDSS TSMT3 60V (3) RDS(on) (Max.) 85mW ID (1) 3A PD 1W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifica... See More ⇒

Detailed specifications: RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03, RSR025N05, STP80NF70, RSU002N06, RSU002P03, RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP

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