All MOSFET. RSR030N06 Datasheet

 

RSR030N06 Datasheet and Replacement


   Type Designator: RSR030N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSMT3
 

 RSR030N06 substitution

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RSR030N06 Datasheet (PDF)

 ..1. Size:217K  rohm
 rsr030n06.pdf pdf_icon

RSR030N06

4V Drive Nch MOSFET RSR030N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX2.90.850.4 0.7( ) 3 Features 1) Low On-resistance. ( ) ( )1 22) Small Surface Mount Package (TSMT3). 0.95 0.950.161.9Abbreviated symbol : PY Application Inner circuit (3)Switching Packaging specifications 2Package Taping (1)Type Code TL

 0.1. Size:600K  rohm
 rsr030n06tl.pdf pdf_icon

RSR030N06

RSR030N06 Nch 60V 3A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)85mWID (1) 3APD1W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifica

Datasheet: RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , 20N50 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP .

Keywords - RSR030N06 MOSFET datasheet

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