RT1C060UN Specs and Replacement
Type Designator: RT1C060UN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSST8
RT1C060UN substitution
- MOSFET ⓘ Cross-Reference Search
RT1C060UN datasheet
Detailed specifications: RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , IRFP250 , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 .
History: CS6N65F
Keywords - RT1C060UN MOSFET specs
RT1C060UN cross reference
RT1C060UN equivalent finder
RT1C060UN pdf lookup
RT1C060UN substitution
RT1C060UN replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CS6N65F
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