All MOSFET. RT1C060UN Datasheet

 

RT1C060UN Datasheet and Replacement


   Type Designator: RT1C060UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSST8
 

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RT1C060UN Datasheet (PDF)

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RT1C060UN

1.5V Drive Nch MOSFET RT1C060UN Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package (TSST8).3) Low voltage drive (1.5V drive).Abbreviated symbol : VB ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TR

Datasheet: RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , STF13NM60N , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 .

History: APT3580BN | RSR030N06

Keywords - RT1C060UN MOSFET datasheet

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