All MOSFET. RT1E060XN Datasheet

 

RT1E060XN Datasheet and Replacement


   Type Designator: RT1E060XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TSST8
 

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RT1E060XN Datasheet (PDF)

 ..1. Size:1138K  rohm
rt1e060xn.pdf pdf_icon

RT1E060XN

Data Sheet4V Drive Nch MOSFET RT1E060XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSST8).Abbreviated symbol : XR ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (

 9.1. Size:312K  rohm
rt1e040rp.pdf pdf_icon

RT1E060XN

4V Drive Pch MOSFET RT1E040RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) High power package. (1) (2) (3) (4)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Inner curcuit Packaging specifications(8) (7) (6) (5)Package Taping2TypeCode TR(1) DrainBasic ordering

 9.2. Size:310K  rohm
rt1e050rp.pdf pdf_icon

RT1E060XN

4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package.3) 4V drive.Abbreviated symbol :UD ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TR2Basic ordering unit (pieces)

Datasheet: RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , STP80NF70 , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 .

History: F5020-S | SPU07N60C3

Keywords - RT1E060XN MOSFET datasheet

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