RT1E060XN Datasheet and Replacement
Type Designator: RT1E060XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TSST8
- MOSFET Cross-Reference Search
RT1E060XN Datasheet (PDF)
rt1e060xn.pdf

Data Sheet4V Drive Nch MOSFET RT1E060XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSST8).Abbreviated symbol : XR ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (
rt1e040rp.pdf

4V Drive Pch MOSFET RT1E040RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low On-resistance.2) High power package. (1) (2) (3) (4)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Inner curcuit Packaging specifications(8) (7) (6) (5)Package Taping2TypeCode TR(1) DrainBasic ordering
rt1e050rp.pdf

4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSST8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package.3) 4V drive.Abbreviated symbol :UD ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TR2Basic ordering unit (pieces)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE2025I | BLF7G21L-160P | UF840KL-TQ2-T | SML5040AN | IRFB3607G | SSR2N60A | BUK661R9-40C
Keywords - RT1E060XN MOSFET datasheet
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History: NCE2025I | BLF7G21L-160P | UF840KL-TQ2-T | SML5040AN | IRFB3607G | SSR2N60A | BUK661R9-40C



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