RT1E060XN Specs and Replacement
Type Designator: RT1E060XN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TSST8
RT1E060XN substitution
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RT1E060XN datasheet
rt1e060xn.pdf
Data Sheet 4V Drive Nch MOSFET RT1E060XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). Abbreviated symbol XR Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (... See More ⇒
rt1e040rp.pdf
4V Drive Pch MOSFET RT1E040RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) (4) 3) 4V drive. Abbreviated symbol UG Application Switching Inner curcuit Packaging specifications (8) (7) (6) (5) Package Taping 2 Type Code TR (1) Drain Basic ordering ... See More ⇒
rt1e050rp.pdf
4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package. 3) 4V drive. Abbreviated symbol UD Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 2 Basic ordering unit (pieces)... See More ⇒
Detailed specifications: RSU002N06, RSU002P03, RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP, 10N65, RTF015N03, RTF016N05, RTF025N03, RTL035N03, RTQ020N03, RTQ020N05, RTQ035N03, RTQ045N03
Keywords - RT1E060XN MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ET6309 | ET8205 | SI2301S | BSZ018N04LS6
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