RU1C002ZP MOSFET Datasheet: P-Ch, 20V, 0.2A. Full specification with pinout and replacement list

RU1C002ZP Specs and Replacement

Type Designator: RU1C002ZP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: UMT3F

RU1C002ZP substitution

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RU1C002ZP datasheet

..1. Size:968K rohm
ru1c002zp.pdf pdf_icon

Data Sheet 1.2V Drive Pch MOSFET RU1C002ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol YK Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic ordering un... See More ⇒

7.1. Size:957K rohm
ru1c002un.pdf pdf_icon

Data Sheet 1.2V Drive Nch MOSFET RU1C002UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol QR Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u... See More ⇒

8.1. Size:1322K rohm
ru1c001zp.pdf pdf_icon

RU1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline l SOT-323FL VDSS -20V SC-85 RDS(on)(Max.) 3.8 UMT3F ID 100mA PD 200mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPack... See More ⇒

8.2. Size:2193K rohm
ru1c001un.pdf pdf_icon

RU1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-323FL VDSS 20V SC-85 RDS(on)(Max.) 3.5 UMT3F ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi... See More ⇒