All MOSFET. RU1E002SP Datasheet

 

RU1E002SP Datasheet and Replacement


   Type Designator: RU1E002SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: UMT3F
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RU1E002SP Datasheet (PDF)

 ..1. Size:1139K  rohm
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RU1E002SP

Data Sheet4V Drive Pch MOSFET RU1E002SP Structure Dimensions (Unit : mm)Silicon P-channel MOSFET UMT3F2.00.90.32(3)Features1) High-speed switching.2) Small package (UMT3F).(1) (2)3) 4V drive. 0.65 0.65 0.131.3Abbreviated symbol : WP ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic orde

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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