RU1E002SP PDF and Equivalents Search

 

RU1E002SP Specs and Replacement

Type Designator: RU1E002SP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: UMT3F

RU1E002SP substitution

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RU1E002SP datasheet

 ..1. Size:1139K  rohm
 ru1e002sp.pdf pdf_icon

RU1E002SP

Data Sheet 4V Drive Pch MOSFET RU1E002SP Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) High-speed switching. 2) Small package (UMT3F). (1) (2) 3) 4V drive. 0.65 0.65 0.13 1.3 Abbreviated symbol WP Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic orde... See More ⇒

Detailed specifications: RTQ045N03, RTR020N05, RTR025N03, RTR025N05, RTR030N05, RTR040N03, RU1C002UN, RU1C002ZP, IRFB31N20D, RU1L002SN, RUC002N05, RUE002N02, RUE002N05, RUF015N02, RUF020N02, RUF025N02, RUL035N02

Keywords - RU1E002SP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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