All MOSFET. RU1E002SP Datasheet

 

RU1E002SP Datasheet and Replacement


   Type Designator: RU1E002SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: UMT3F
 

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RU1E002SP Datasheet (PDF)

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RU1E002SP

Data Sheet4V Drive Pch MOSFET RU1E002SP Structure Dimensions (Unit : mm)Silicon P-channel MOSFET UMT3F2.00.90.32(3)Features1) High-speed switching.2) Small package (UMT3F).(1) (2)3) 4V drive. 0.65 0.65 0.131.3Abbreviated symbol : WP ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic orde

Datasheet: RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP , IRF730 , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 .

History: S10H06R | SM3016NSU | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

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