All MOSFET. RU1L002SN Datasheet

 

RU1L002SN Datasheet and Replacement


   Type Designator: RU1L002SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: UMT3F
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RU1L002SN Datasheet (PDF)

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RU1L002SN

Data Sheet2.5V Drive Nch MOSFET RU1L002SN Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive (2.5V drive).(1) (2)3) Small package (UMT3F). 0.65 0.65 0.131.3Abbreviated symbol : RK ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingType

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History: VBZM80N03 | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

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