RUC002N05 Specs and Replacement
Type Designator: RUC002N05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SST3 SOT23
RUC002N05 substitution
- MOSFET ⓘ Cross-Reference Search
RUC002N05 datasheet
ruc002n05hzgt116.pdf
RUC002N05HZGT116 Datasheet Nch 50V 200mA Small Signal MOSFET AEC-Q101 Qualified lOutline l SOT-23 VDSS 50V SST3 RDS(on)(Max.) 2.2 ID 200mA PD 350mW lInner circuit l lFeatures l 1) Very fast switching 2) Ultra low voltage drive(1.2V drive) 3) AEC-Q101 Qualified 4) Pb-free lead plating ; RoHS compliant. 5) Halogen... See More ⇒
Detailed specifications: RTR025N03, RTR025N05, RTR030N05, RTR040N03, RU1C002UN, RU1C002ZP, RU1E002SP, RU1L002SN, IRF1405, RUE002N02, RUE002N05, RUF015N02, RUF020N02, RUF025N02, RUL035N02, RUM002N02, RUM002N05
Keywords - RUC002N05 MOSFET specs
RUC002N05 cross reference
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RUC002N05 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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