RUF015N02 Specs and Replacement
Type Designator: RUF015N02
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TUMT3
RUF015N02 substitution
- MOSFET ⓘ Cross-Reference Search
RUF015N02 datasheet
ruf015n02.pdf
RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate (2) Source Abbreviated symbol PS Applications (3) Drain Switching Packaging specifications Inner circuit (3) P... See More ⇒
ruf015n02tl.pdf
RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate (2) Source Abbreviated symbol PS Applications (3) Drain Switching Packaging specifications Inner circuit (3) P... See More ⇒
Detailed specifications: RTR040N03, RU1C002UN, RU1C002ZP, RU1E002SP, RU1L002SN, RUC002N05, RUE002N02, RUE002N05, IRFZ46N, RUF020N02, RUF025N02, RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02
Keywords - RUF015N02 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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