All MOSFET. RUF015N02 Datasheet

 

RUF015N02 Datasheet and Replacement


   Type Designator: RUF015N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TUMT3
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RUF015N02 Datasheet (PDF)

 ..1. Size:110K  rohm
 ruf015n02.pdf pdf_icon

RUF015N02

RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate(2) SourceAbbreviated symbol : PS Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

 0.1. Size:109K  ruichips
 ruf015n02tl.pdf pdf_icon

RUF015N02

RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive). (1) Gate(2) SourceAbbreviated symbol : PS Applications(3) DrainSwitching Packaging specifications Inner circuit (3)P

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSB60R030HT | SVF18N65PN | 17P10L-TA3-T | IRF6619 | 9N70 | 2N65KL-TN3-R | IXFA16N50P

Keywords - RUF015N02 MOSFET datasheet

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