All MOSFET. RUU002N05 Datasheet

 

RUU002N05 Datasheet and Replacement


   Type Designator: RUU002N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: UMT3 SC70 SOT323
 

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RUU002N05 Datasheet (PDF)

 ..1. Size:203K  rohm
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RUU002N05

1.2V Drive Nch MOSFET RUU002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETUMT3(SC-70)Features1) High speed switing.2) Small package(UMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T106Basic ordering unit (piece

Datasheet: RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , 2N7002 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP .

History: FQI17N08TU | NVMFS5C442NL | P8806BM | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

Keywords - RUU002N05 MOSFET datasheet

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