RUU002N05 PDF and Equivalents Search

 

RUU002N05 Specs and Replacement

Type Designator: RUU002N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: UMT3 SC70 SOT323

RUU002N05 substitution

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RUU002N05 datasheet

 ..1. Size:203K  rohm
 ruu002n05.pdf pdf_icon

RUU002N05

1.2V Drive Nch MOSFET RUU002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 (SC-70) Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T106 Basic ordering unit (piece... See More ⇒

Detailed specifications: RUF020N02, RUF025N02, RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, MMIS60R580P, RVQ040N05, RW1A013ZP, RW1A020ZP, RW1A025AP, RW1A030AP, RW1C015UN, RW1C020UN, RW1C025ZP

Keywords - RUU002N05 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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