RW1A030AP MOSFET. Datasheet pdf. Equivalent

   Type Designator: RW1A030AP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: WEMT6

RW1A030AP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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