RXH100N03 Specs and Replacement
Type Designator: RXH100N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SOP8
RXH100N03 substitution
- MOSFET ⓘ Cross-Reference Search
RXH100N03 datasheet
rxh100n03.pdf
Data Sheet 4V Drive Nch MOSFET RXH100N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (piece... See More ⇒
Detailed specifications: RW1C015UN, RW1C020UN, RW1C025ZP, RW1E014SN, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, 50N06, RXH125N03, RXQ040N03, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BRCS700P10DP | BTS282Z
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