All MOSFET. RXH100N03 Datasheet

 

RXH100N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RXH100N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: SOP8

 RXH100N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RXH100N03 Datasheet (PDF)

 ..1. Size:1124K  rohm
 rxh100n03.pdf

RXH100N03 RXH100N03

Data Sheet4V Drive Nch MOSFETRXH100N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETSOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic ordering unit (piece

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: S10H18RN | NTMFS5H615NL | ST10E4 | GP1M003A090XX | IRC7305 | SWD069R10VS | PB555BA

 

 
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