RXQ040N03 PDF and Equivalents Search

 

RXQ040N03 Specs and Replacement

Type Designator: RXQ040N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 3.3 nC

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TSMT6

RXQ040N03 substitution

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RXQ040N03 datasheet

 ..1. Size:1273K  rohm
rxq040n03.pdf pdf_icon

RXQ040N03

Data Sheet 4V Drive Nch MOSFET RXQ040N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). Abbreviated symbol XQ Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TCR 2 Basic orderin... See More ⇒

Detailed specifications: RW1C025ZP, RW1E014SN, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, IRFZ44, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01

Keywords - RXQ040N03 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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