All MOSFET. RXQ040N03 Datasheet

 

RXQ040N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RXQ040N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.3 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TSMT6

 RXQ040N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RXQ040N03 Datasheet (PDF)

 ..1. Size:1273K  rohm
 rxq040n03.pdf

RXQ040N03 RXQ040N03

Data Sheet4V Drive Nch MOSFET RXQ040N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT6Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).Abbreviated symbol : XQ ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TCR2Basic orderin

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UT100N03G-TA3-T

 

 
Back to Top