All MOSFET. RXQ040N03 Datasheet

 

RXQ040N03 Datasheet and Replacement


   Type Designator: RXQ040N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TSMT6
 

 RXQ040N03 substitution

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RXQ040N03 Datasheet (PDF)

 ..1. Size:1273K  rohm
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RXQ040N03

Data Sheet4V Drive Nch MOSFET RXQ040N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT6Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).Abbreviated symbol : XQ ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TCR2Basic orderin

Datasheet: RW1C025ZP , RW1E014SN , RW1E015RP , RW1E025RP , RXH070N03 , RXH090N03 , RXH100N03 , RXH125N03 , IRFZ44 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 .

History: STD3NM60T4 | HM8N20I

Keywords - RXQ040N03 MOSFET datasheet

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