RXQ040N03 Specs and Replacement
Type Designator: RXQ040N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 3.3 nC
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TSMT6
RXQ040N03 substitution
- MOSFET ⓘ Cross-Reference Search
RXQ040N03 datasheet
rxq040n03.pdf
Data Sheet 4V Drive Nch MOSFET RXQ040N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). Abbreviated symbol XQ Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TCR 2 Basic orderin... See More ⇒
Detailed specifications: RW1C025ZP, RW1E014SN, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, IRFZ44, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, RZF020P01
Keywords - RXQ040N03 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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